Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 16: Semiconductor laser I
HL 16.3: Vortrag
Dienstag, 28. März 2006, 11:30–11:45, BEY 154
Solutions towards high temperature AlGaInP-VCSEL — •Marcus Eichfelder1,2, Robert Rossbach1,2, Heinz Schweizer1, Michael Jetter1,2, and Peter Michler2 — 14th Physics Institute, University Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany — 25th Physics Institute, University Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart, Germany
Vertical cavity surface emitting lasers (VCSEL) based on AlGaInP material system have attracted much interest as potential key components for low-cost optical data communication via plastic optical fibres (POF). This material system seems to fail the requirements of e.g. automotive applications (+125∘C) due to the poor electron confinement and therefore they show high temperature sensitivity. We investigated the internal heating of our VCSELs by using a cylindrical heat dissipation model [1]. Out of these data we found a strong dependence of the aperture and mesa diameter and their ratio on the temperature behaviour. With this knowledge we designed new devices with an additional heat spreading layer for further heat removal. First results will be presented.
[1] W. Nakwaski, M. Osinski. Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays, Electron. Lett., 28, p. 572, 1992.