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HL: Halbleiterphysik

HL 16: Semiconductor laser I

HL 16.7: Vortrag

Dienstag, 28. März 2006, 12:30–12:45, BEY 154

Diode lasers for Terahertz applications — •Carsten Brenner, Stefan Hoffmann, and Martin Hofmann — AG Optoelektronische Bauelemente und Werkstoffe, Ruhr-Universität Bochum, IC2/152, D-44780 Bochum

In recent years the research in Terahertz (THz) radiation has caused a great demand in new industrial applications. Despite this development there is no system for the generation and detection of THz radiation which is able to satisfy the necessary requirements for industrial use, as low cost and sufficient THz emission power. Our approach to close this gap is based on nonlinear processes in semiconductor lasers. We operate a semiconductor laser on two colours in an external cavity and the difference frequency in the THz regime is generated in the cavity itself [1,2]. The necessary steps to increase the THz output power to facilitate imaging applications are presented. Furthermore we discuss a new concept to detect THz radiation at room temperature involving semiconductor lasers.

[1]S. Hoffmann, M. Hofmann, E. Bründermann, M. Havenith, M. Matus, J.V. Moloney, A.S. Moskalenko, M. Kira, S.W. Koch, S. Saito and K. Sakai, Four-wave mixing and direct terahertz emission with two-color semiconductor lasers, Appl. Phys. Lett. 84, 3585 (2004)

[2]S. Hoffmann, M. Hofmann, M. Kira, ans S.W. Koch, Two-color diode lasers for generation of THz radiation, Semiconductor Science and Technology 20, 205 (2005)