HL 16: Semiconductor laser I
Tuesday, March 28, 2006, 11:00–13:15, BEY 154
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11:00 |
HL 16.1 |
Spatio-Temporal Emission Dynamics of VCSELs with a Surface Grating — •Christian Fuchs, Tobias Gensty, Joachim Kaiser, Johannes Michael Ostermann, Pierluigi Debernardi, and Wolfgang Elsäßer
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11:15 |
HL 16.2 |
Gain and threshold current in quantum-wire intersubband laser structures — •Thomas Herrle, Stephan Haneder, and Werner Wegscheider
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11:30 |
HL 16.3 |
Solutions towards high temperature AlGaInP-VCSEL — •Marcus Eichfelder, Robert Rossbach, Heinz Schweizer, Michael Jetter, and Peter Michler
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11:45 |
HL 16.4 |
Temperature and Band gap Dependence of Carrier Recombination Processes in GaAsSb/GaAs Quantum Well Lasers — •Konstanze Hild, Igor Marko, Shirong Jin, Stephen Sweeney, Jiang-Bo Wang, Shane Johnson, and Yong-Hang Zhang
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12:00 |
HL 16.5 |
Polarization and emission direction dependend measurements on CEO Quantum Wire Cascade Emitter Devices — •Stephan Haneder, Thomas Herrle, Christian Gerl, Dieter Schuh, and Werner Wegscheider
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12:15 |
HL 16.6 |
Low divergence single-mode edge emitting 650 nm lasers based on longitudinal photonic bandgap crystal — •Kristijan Posilovic, Thorsten Kettler, Leonid Ya. Karachinsky, Vitaly A. Shchukin, Vladimir P. Kalosha, Udo W. Pohl, Nikolai N. Ledentsov, and Dieter Bimberg
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12:30 |
HL 16.7 |
Diode lasers for Terahertz applications — •Carsten Brenner, Stefan Hoffmann, and Martin Hofmann
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12:45 |
HL 16.8 |
Theory of Nonlinear Optics in Quantum Cascade Lasers — •Carsten Weber, Fouad Banit, and Andreas Knorr
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13:00 |
HL 16.9 |
Fabrication and characterization of mid-infrared GaAs/Al0.45Ga0.55As quantum cascade lasers — •Jan Heinrich, Sven Höfling, Jochen Seufert, Johannes Koeth, Johann Peter Reithmaier, and Alfred Forchel
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