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HL: Halbleiterphysik
HL 18: Symposium Quantum optics in semiconductors II
HL 18.1: Fachvortrag
Dienstag, 28. März 2006, 15:15–15:45, HSZ 01
Light Matter Interaction Effects in Quantum Dot Microcavities — •S. Reitzenstein1, C. Hofmann1, A. Löffler1, J. P. Reithmaier1, M. Kamp1, A. Forchel1, G. Sek2, V. D. Kulakovskii3, A. Bazhenov3, A. Gorbunov3, L. V. Keldysh4, and T. L. Reinecke5 — 1Technische Physik, Universität Würzburg, Am Hubland, D 97074 Würzburg,Germany — 2University of Technology, Wroclaw, Poland — 3Institute for Solid State Physics, Rus. Acad. of Science, Chernogolovka, Russia — 4Lebedev Institute, Rus. Acad. Of Science, Moscow, Russia — 5Naval Research Laboratory, Washington DC , USA
Using high quality factor microcavities with quantum dots and long photon lifetimes the weak and strong interaction regimes between single quantum dot excitons and electric fields given by single photons are investigated by photoluminescence spectroscopy. The cavities are based on undoped GaAs/AlAs VCSEL structures with embedded InGaAs quantum dots from which micropillars with diameters between 1.0 µm and 4 µm are realized by reactive etching. The cavity photon lifetimes range from about 2 to close to 20 ps. In the weak coupling regime we observe e.g. an enhancement of the exciton and biexciton emission probability due to the Purcell effect. By using dots with large dipole moment we observe clear anticrossing effects due to strong interaction characterized by a vacuum Rabi splitting of up to 140 µeV.