Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 19: Quantum dots and wires: Optical properties II

HL 19.3: Talk

Tuesday, March 28, 2006, 17:45–18:00, HSZ 01

Structural investigations of MBE-grown InN Nano-Whiskers — •Ratan Debnath¹, Toma Stoica^1,2, Ralph Meijers¹, Thomas Richter¹, Raffaella Calarco¹, and Hans Lüth¹ — ¹Institute of Thin Films and Interfaces (ISG1) and CNI - Centre of Nanoelectronic Systems for Information Technology, Research Center Jülich,52425 Jülich, Germany — ²INCDFM, Magurele, POB Mg7, Bucharest, Romania

Nanowires are intensively studied for future device applications of low-dimensional systems. GaN nanowhiskers were investigated in great detail showing for instance high crystalline quality and efficient luminescence. Investigations of InN nanowhiskers have been staying behind since it is more difficult to produce InN of good quality. However InN has interesting properties like high electron mobility, low bandgap and non-toxicity. InN was grown by plasma-assisted molecular beam epitaxy (PAMBE) on Si(111) substrates under N-rich conditions resulting in columnar morphology of the grown layers. Substrate temperature was considerably lower compared to GaN growth. The samples were investigated using scanning electron microscopy (SEM) as well as Photo- and Cathodoluminescence (PL and CL) spectroscopy. The growth was optimized to obtain uniform columns of good crystalline quality. An optical bandgap was found in the range 0.73-0.82eV and electron concentrations between 8× 10¹⁷ and 6× 10¹⁸ cm⁻³ were determined.