Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 19: Quantum dots and wires: Optical properties II

HL 19.7: Vortrag

Dienstag, 28. März 2006, 18:45–19:00, HSZ 01

Optical properties of implanted single ZnO nanowires — •Daniel Stichtenoth¹, Sven Müller¹, Carsten Ronning¹, Lars Wischmeier², Chegnui Bekeny², and Tobias Voss² — ¹II. Institute of Physics, University of Göttingen, Germany — ²Institute for Solid State Physics, University of Bremen, Germany

Doping of semiconductor nanostructures via ion implantation processes offers the advantage of precise control of the doping concentration in both lateral and depth direction beyond any solubility limit. In this study, single crystalline ZnO nanobelts and -wires were synthesized according to the VLS mechanism and subsequently dispersed on top of Si substrates. The nanowires were implanted either with ¹⁴N, ³¹P, ¹⁴N & ³¹P, or ²⁰Ne ions. Nitrogen and Phosphorous are potential acceptors in ZnO; whereas, the objective of the Ne-implantation was to monitor the implantation induced damage. The range of the ions, set by the ion energy, matched the diameter of the nanowires, and post-implantation annealing procedures were done under vacuum conditions in order to remove the introduced damage. The treated nanowires were individually investigated by temperature-dependent µ-PL measurements; correlations between the optical spectra and the implanted species as well as the implantation parameters are discussed.