Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 19: Quantum dots and wires: Optical properties II

HL 19.8: Talk

Tuesday, March 28, 2006, 19:00–19:15, HSZ 01

Nitrogen implanted ZnO nanowires — •Sven Müller, Daniel Stichtenoth, Daniel Schwen, and Carsten Ronning — 2nd Institute of Physics, University Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Single crystalline ZnO nanowires were grown via a chemical vapor deposition process: ZnO powder was placed into a horizontal tube furnace and heated up to 1350^∘C. The vapour was transported by an Ar gas flow to the substrates in a temperature zone between 1000 - 1180^∘C. Prior growth the Si substrates were covered with a thin gold layer, which acts as a catalyst for the vapour-liquid-solid (VLS) mechanism. The wurtzite ZnO nanowires grew along the c-axis and had a belt-like shape in the nanometer range. These ZnO nanowires were implanted with 50 keV nitrogen ions (as a potential acceptor) in order to change the electrical and optical properties. Directly after the implantation process, the properties were dominated by the radiation damage, which was subsequently healed by annealing in vacuum or in an oxygen atmosphere. The nitrogen implantation generated three new luminescence transitions at energies of 3.35 eV, 3.32, and 3.235 eV. The origin of these features will be discussed in respect to their temperature- and power-dependencies.