Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 21: Transport properties I

HL 21.5: Vortrag

Dienstag, 28. März 2006, 17:30–17:45, BEY 118

Transistor characteristics of three leaky contacts defined in a two dimensional electron gas — •Daniela Spanheimer, Lukas Worschech, Christian R. Müller, and Alfred Forchel — Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

The capacitance of leaky nanojunctions has recently attracted considerable attention. It has been stated that in mesoscopic system the capacitance not only depends on the geometry, but also on electrochemical entities and the transmission probability between the reservoirs [1]. We have studied the capacitive couplings between three leaky contacts by studying the gain properties of a transistor like junction. For that purpose we have realized two rows of etched holes in a modulation doped GaAs/AlGaAs heterostructure. The two rows define three electron reservoirs, which are leaky coupled to each other. We have determined the current voltage characteristics for several possible variations of the three terminals for different separations between the rows and different hole diameters. For row separations in the order of 1 µm transistor characteristics have been observed even at room temperature, which we discuss in terms of a leaky capacitor model.

[1] T. Christen and M. Büttiker, Phys. Rev. Lett. 77, 143 (1996).