Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 21: Transport properties I

HL 21.6: Talk

Tuesday, March 28, 2006, 17:45–18:00, BEY 118

Full non-equilibrium quantum transport theory of high-scattering semiconductor devices — •Tillmann Kubis, Alexandros Trellakis, and Peter Vogl — Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching

We present fully self-consistent non-equilibrium Green’s function (NEGF) calculations for semiconductor heterostructures in a regime where multiple scattering and quantum effects such as interference, carrier confinement and carrier capture must be treated on an equal footing. We have implemented non-local energy- and momentum-dependent scattering self-energies in the self-consistent Born approximation for charged impurities, as well as acoustic and polar optical phonons. Electron-electron interaction is included via the self-consistent Hartree potential. This ab-initio implementation of quantum transport theory allows us to predict carrier dynamics in any kind of semiconductor nanodevice, ranging from simple n-i-n resistors to complex multi-quantum well structures. We present the I-V characteristics, the charge density and potential profile of a 12nm InGaAs quantum well that illustrates carrier capture into multiple bound states/resonances and compare the results with ballistic and quantum drift diffusion models.