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HL: Halbleiterphysik

HL 21: Transport properties I

HL 21.7: Vortrag

Dienstag, 28. März 2006, 18:00–18:15, BEY 118

Source switching in an electron Y-branch switch — •Stefan Lang, David Hartmann, Lukas Worschech, and Alfred Forchel — Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

We have observed gate controlled source switching in an electron Y-branch switch. The Y-branched nanojunctions were realized on the basis of a modulation doped $GaAs/AlGaAs$ heterostructure and are controlled by four side-gates. Gate voltage up-sweeps at one side-gate firstly open the first source channel. Then the second source-branch becomes conductive and above a critical gate voltage the first source is pinched-off. This leads to a peak in the current-voltage characteristic of the first source-branch. We have modeled the source switching taking into account gating as well as selfgating of the Y-branch nanojunction.