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16:30 |
HL 21.1 |
DENSITY-OF-STATES IN MICROCRYSTALLINE SILICON FROM THERMALLY-STIMULATED CONDUCTIVITY — •Nacera Souffi, Rudolf Brüggemann, and Gottfried H. Bauer
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16:45 |
HL 21.2 |
Characterization of Ti / TiO_2 / Pt - Schottky diodes — •Philipp Zabel, Sven Bönisch, Germà García-Belmonte, Juan Bisquert, and Thomas Dittrich
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17:00 |
HL 21.3 |
Surface photovoltage for characterization of porous semiconductors — •Thomas Dittrich, Iván Mora-Seró, Germà García-Belmonte, and Juan Bisquert
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17:15 |
HL 21.4 |
Quantitative modelling of the temperature and magnetic-field dependence of the resistivity of paramagnetic Ga1−xMnxAs with x up 7% — •C. Michel, S. Ye, V. Rajevac, P.J. Klar, S.D. Baranovskii, P. Thomas, W. Heimbrodt, and B. Goldlücke
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17:30 |
HL 21.5 |
Transistor characteristics of three leaky contacts defined in a two dimensional electron gas — •Daniela Spanheimer, Lukas Worschech, Christian R. Müller, and Alfred Forchel
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17:45 |
HL 21.6 |
Full non-equilibrium quantum transport theory of high-scattering semiconductor devices — •Tillmann Kubis, Alexandros Trellakis, and Peter Vogl
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18:00 |
HL 21.7 |
Source switching in an electron Y-branch switch — •Stefan Lang, David Hartmann, Lukas Worschech, and Alfred Forchel
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18:15 |
HL 21.8 |
Mobility Enhancement of Shallow Modulation Doped GaAs/AlGaAs Heterostructures by Presence of Metal at the Surface — •Holger Welsch, Christian Heyn, and Wolfgang Hansen
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18:30 |
HL 21.9 |
Photoexcited electron and hole transport in thin film tunnel systems — •Peter Thissen, Domokos Kovacs, Jörg Winter, Eckart Hasselbrink, and Detlef Diesing
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18:45 |
HL 21.10 |
Thermoelectric cooling: a new approach — •G.N. Logvinov, J. E. Velazquez, and Yu. G. Gurevich
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19:00 |
HL 21.11 |
Admittance of open quantum systems — •Paul Racec, Roxana Racec, and Ulrich Wulf
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19:15 |
HL 21.12 |
Non-linear I-V characteristics of nano-transistors in the Landauer-Büttiker formalism — •Ulrich Wulf, Paul Racec, and Alexandru Nemnes
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