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HL: Halbleiterphysik

HL 22: Semiconductor laser II

HL 22.1: Vortrag

Dienstag, 28. März 2006, 15:15–15:30, BEY 154

Low powerconsumption of blue-violet laser diodes — •C. Rumbolz, C. Eichler, M. Schillgalies, A. Avramescu, M. Furitsch, G. Brüderl, A. Lell, U. Strauss, and V. Härle — OSRAM Opto Semiconductors GmbH, Leibnizstr. 4, 93055Regensburg

Commercial applications like post DVD data storage systems or high resolution printing require blue-violet laser diodes with low power consumption. Mobile devices with limited battery capacities and small sizes need diodes with low heat dissipation to avoid extensive cooling systems. Low heat dissipation also guarantees longer lifetimes of the diodes. We achieve electrical power dissipation values as low as 400mW at 30mW optical cw-output by improving threshold current, slope efficiency and voltage. One step of optimization is the adjustment the n-cladding layer. Layers with strong wave guidance are good for low threshold current but increase the voltage. We found a n-cladding layer optimum for low power dissipation. Next step of improvement is the reduction of the operation current by lowering the internal losses. One main loss mechanism is the absorption at Mg-dopants in the p-GaN- and p-AlGaN layers. A compromise between hole injection and minimization of absorption has been found. With these optimizations we show cw-threshold currents smaller 35mA for 1,5µm wide ridgewaveguide lasers and slope efficiencies up to 1,2W/A.