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HL: Halbleiterphysik

HL 22: Semiconductor laser II

HL 22.3: Vortrag

Dienstag, 28. März 2006, 15:45–16:00, BEY 154

Recombination dynamics in InAs-quantum dots coupled to the tilted cavity waveguide mode — •P. Zimmer¹, N.V. Kryzhanovskaya², N.N. Ledentsov³, A. Hoffmann¹, D. Bimberg¹, A.R. Kovsh³, S.S. Mikhrin³, V.A. Shchukin¹, L.Ya. Karachinsky², and M.V. Maximov² — ¹Institut für Festkörperphysik, Technische Universität, Hardenbergstr. 36, 10623 Berlin, Germany — ²Abraham Ioffe Physical Technical Institute, Politekhnicheskaya 26, 194021 St.Petersburg, Russia — ³NL Nanosemiconductor GmbH, Konrad-Adenauer-Allee 11, 44263 Dortmund, Germany

In this report we present recombination dynamics of nonequilibrium carriers in InAs-quantum dots embedded in a No-dqtilted-modeNo-dq cavity. All epitaxial structure is based on a resonantly coupled planar waveguide and a multilayer interference reflector. In accordance with the theoretical prediction, the radiative recombination rate increases when the emission wavelenght corresponds to the tilted cavity waveguide mode whereas the off-resonance emission is suppressed. This effect has similar nature as the Purcell effect. Time-resolved photoluminescence studies indeed pointed out that the recombination dynamics is affected by the coupling of photons to the tilted-mode cavity. We found out that the radiative lifetime of carriers whose transition energy is in resonance to a tilted cavity waveguide mode is reduced by a factor of 1,5. The resonant wavelenght can be tuned by the design of the multilayer waveguide structure and it shows only a weak temperature dependence compared to the band gap temperature shift. This approach is promising for the realisation of highly-efficient wavelenght-stabilised LED’s and lasers.