Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 22: Semiconductor laser II

HL 22.5: Talk

Tuesday, March 28, 2006, 16:15–16:30, BEY 154

GaInAsN Quantum Dot Lasers grown by RF MBE — •Bernd Marquardt¹, Dirk Bisping¹, Marc Fischer², and Alfred Forchel¹ — ¹Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany — ²nanoplus Nanosystems and Technologies GmbH, Oberer Kirschberg 4, 97218 Gerbrunn, Germany

Two different approaches are currently used to achieve long wavelength emission on GaAs substrate: InGaAs quantum dot (QD) and GaInAsN quantum well (QW) material. Laser emission with promising device properties has been demonstrated in both material systems. Here we report on the successful combination of both approaches: the realization of a GaInAsN QD laser. First, high quality N-free lasers emitting at 1280 nm with an active region consisting of InAs QDs embedded in an InGaAs Quantum Well (QW) were realized by solid source MBE. Based on this active region the incorporation of nitrogen in either the QDs or the embedding QW material or both was studied to extend the emission wavelength. Active nitrogen was supplied by an RF plasma source. A QD density of about 3.5 1010 cm-2 combined with excellent photoluminescence (PL) properties was obtained from PL test structures. Subsequently SCH laser structures with N-containing QD active region were realized. Based on a multi stack active region, a GaInAsN QD laser emitting at 1360 nm has been realized for the first time.