Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 22: Semiconductor laser II
HL 22.7: Vortrag
Dienstag, 28. März 2006, 16:45–17:00, BEY 154
Carrier Losses in Semiconductor Laser Structures — •Angela Thränhardt1, Christoph Schlichenmaier1, Irina Kuznetsova1, Stephan W. Koch1, Jörg Hader2, and Jerome V. Moloney2 — 1Fachbereich Physik, Philipps-Universität Marburg, Renthof 5, 35032 Marburg — 2Arizona Center for Mathematical Sciences, The University of Arizona, Tucson, AZ 85721, USA
Microscopic modelling of semiconductor heterostructures offers the advantages of a better understanding of laser operation as well as enhanced predictability and possibility of optimisation. A theory on the level of the semiconductor Bloch equations including scattering in second Born and Markov approximation has been shown to quantitatively reproduce and predict optical spectra for, among others, gain, refractive index and linewidth enhancement factor [1,2]. To accurately determine the threshold, losses in laser operation are also important [3]. Simple dependencies as e.g. a quadratic rise of radiative losses with density are often assumed; however, these are valid for a Boltzmann distribution of carriers, i.e. far below lasing threshold, and may not be used for laser operation.
In this talk, we present a microscopic theory to accurately predict optical gain/absorption, refractive index, photoluminescence and laser losses on the same level. Good agreement with experiment is obtained. We investigate the validity of simple rules of thumb commonly used for laser simulations and find strong deviations in the lasing regime.
[1] J. Hader, S. W. Koch, J. V. Moloney, Sol. Stat. El. 47, 513 (2003).
[2] A. Thränhardt et al., Appl. Phys. Lett. 86, 201117 (2005).
[3] J. Hader et al., IEEE J. Quant. El. 41, 1217 (2005).