Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 22: Semiconductor laser II

HL 22.8: Talk

Tuesday, March 28, 2006, 17:00–17:15, BEY 154

Multi-spectral infrared imaging of high-power diode lasers — •Mathias Ziegler, Fritz Weik, and Jens W. Tomm — Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany

Below band gap radiation of 808 nm GaAs-based high-power diode laser arrays in several spectral channels, namely the mid (MIR: 2.4-6 µm) and the near infrared (NIR: 1.5-2 µm), is used to reveal potential signs of the driving forces of an enhanced device degradation. By applying a fast infrared camera setup the infrared images of the devices can be analyzed spatially resolved down to the diffraction limit. Thus a localization of these degradation signs is possible on the scale of an emitter of the multi-emitter bar and even of parts of it.

With the multi-spectral approach it is possible to distinguish between the different mechanisms involved. The MIR signal mainly is assigned to the thermal radiation according to Planck‘s law and the NIR signal to deep-level-related luminescence These assumptions are supported by complementary measurements of the arrays infrared emission and absorption spectra, which indeed show the described spectral features.