Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 23: Interfaces/surfaces

HL 23.2: Talk

Tuesday, March 28, 2006, 17:30–17:45, BEY 154

Distribution of Co atoms on Si (100) investigated by high resolution Rutherford backscattering spectrometry. — •Saroj Prasad Dash, Dagmar Goll , and Heinz Dieter Carstanjen — Max- Planck- Institut für Metallforschung, Stuttgart, Germany

We have investigated the initial stages of the growth of Co on a Si (100) surface at room temperature. The structural evolutions and the material distribution on and below the surface for 0.08 ML to 3 ML Co coverage have been probed in situ by high resolution Rutherford back scattering spectrometry. We can clearly classify the coverage from 0.08 ML to 3 ML into two different regimes. For coverage of 0.08 ML to 1.09 ML we were able to observe Co atoms chemisorbed in the form of 2D islands on the surface and atoms on the sub-surfaces, showing higher bulk diffusivity than surface diffusivity of Co in Si. For coverage of 2 ML and 3 ML we could observe silicide-like phases on the surface. This gives a strong indication that for 2 ML and 3 ML coverage Si mass transport occurs from the substrate for silicide formation and lowers the surface free energy.