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HL: Halbleiterphysik
HL 24: Ultra fast phenomena
HL 24.3: Talk
Tuesday, March 28, 2006, 15:45–16:00, POT 151
Transient gain spectroscopy in III-V semiconductor structures — •Kapil Kohli1, Sebastian Borck1, Christoph Lange1, Sangam Chatterjee1, Kerstin Volz1, Wolfgang Stolz1, Lutz Geelhaar2, Henning Riechert2, Klaus Köhler3, and Wolfgang Rühle1 — 1Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — 2Infineon Technologies AG, Corporate Research Photonics, D-81730 Munich, Germany — 3Fraunhofer Institute for Applied Solid-State Physics, Tullastraße 72 D-79108 Freiburg, Germany
The temporal dynamics of absorption and gain spectra after optical excitation with femtosecond pump pulses are measured on a femto- to picosecond time-scale by white-light probe pulses. The material systems under investigation are GaAs and (GaIn)(NAs). Both, multi quantum well structures and bulk material, are studied.