Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 26: II-VI semiconductors II
HL 26.11: Vortrag
Dienstag, 28. März 2006, 17:45–18:00, POT 51
Optical and electrical properties of phosphorous doped ZnO thin films — •M. Grundmann1, H. von Wenckstern1, J. Sann2, M. Brandt1, G. Benndorf1, S. Heitsch1, A. Krtschil3, M. Lorenz1, B. K. Meyer2, and A. Krost3 — 1Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig — 2I.Physikalisches Institut JLU-Gießen, Heinrich-Buff-Ring 16, D-35392 Gießen — 3Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, PO Box 4120, 39016 Magdeburg
ZnO is a wide band-gap semiconductor with remarkable material properties. First and foremost the large excitonic binding energy of about 60 meV makes ZnO interesting for UV optoelectronic applications. The major obstacle nowadays is the difficulty of reproducibly growing high quality p-type ZnO. We have investigated the properties of ZnO thin films doped with phosphorous. The samples are grown by pulsed-laser deposition on sapphire or ZnO single crystalline substrates. The optical properties are investigated by means of recombination spectra. Integral electrical properties are obtained from Hall effect measurements. The Fermi level close to the surface is determined by scanning surface potential microscopy. Possible lateral dependencies of the net doping density are investigated by scanning capacitance microscopy, showing p-type domains for homo-epitaxially grown ZnO:P, for instance. Independent on the growth conditions the samples show a pronounced correlation between the resistivity and with that the Fermi level and the intensity ratio between the near band edge and deep level emission.