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HL: Halbleiterphysik

HL 26: II-VI semiconductors II

HL 26.13: Vortrag

Dienstag, 28. März 2006, 18:15–18:30, POT 51

ZnO films doped with rare earth metals — •M. Diaconu¹, H. Schmidt¹, H. Hochmuth¹, H. von Wenckstern¹, D. Spemann¹, M. Lorenz¹, M. Grundmann¹, M. Fecioru-Morariu², K. Schmalbuch², and G. Güntherodt² — ¹Inst. für Exp. Physik II, Fakultät für Physik, Uni. Leipzig, Linnestrasse 3-5, 04103 Leipzig — ²II. Physikalisches Institut, RWTH Aachen, Physikzentrum Melaten, Huyskensweg Turm 28B, 52074 Aachen

The electrical and magnetic properties of ZnO:Gd and ZnO:Nd were studied for films grown by pulsed laser deposition on a-plane sapphire. Different growth conditions were used to prepare ZnREO films with RE = Gd or Nd contents around 0.01, 0.1 or 1 at% and thicknesses from 50 nm to 1000 nm. The rare earth concentration and position in the wurtzite lattice were determined by Rutherford backscattering and particle induced X-ray emission. Hall investigations revealed a dependence of the electrical properties on film thickness and composition. Magnetic properties were investigated in a wide temperature range using a superconducting quantum interference device and magneto-optical Kerr effect.