Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 26: II-VI semiconductors II

HL 26.1: Vortrag

Dienstag, 28. März 2006, 15:15–15:30, POT 51

Homoepitaxial Growth of ZnO — •Stefan Lautenschläger, Arndt Zeuner, Joachim Sann, Niklas Volbers, Swen Graubner, and Bruno K. Meyer — I. Physikalisches Institut, Justus Liebig Universität Giessen, Heinrich Buff Ring 16, 35392 Giessen

ZnO, 1960’s promising semiconductor, is regaining increased interest after the first reports of p-type doping. Its direct bandgap and total transparency for visible light suppose this material is suitable for many applications. Nowadays ZnO single crystals are available in sizes up to two inches.

Here we report on homoepitaxial growth of ZnO on ZnO single crystals with a home-bulit CVD epitaxy system. We were able to grow nominally undoped thin films of high quality. In doped samples we found the incorporation of nitrogen acceptors and lithium into the ZnO lattice.

All films were characterised by PL, XRD, SEM, SIMS and Hall measurements.