Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 26: II-VI semiconductors II

HL 26.5: Vortrag

Dienstag, 28. März 2006, 16:15–16:30, POT 51

MOCVD-Growth of Arsenic and Nitrogen (dual)-doped epilayers: structural, electrical and optical properties — •Sören Giemsch, Armin Dadgar, Andre Krtschil, Frank Bertram, Jürgen Christen, and Alois Krost — Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany

The direct semiconductor ZnO with a large band-gap of 3.3 eV at room temperature and a binding energy of 60 meV for the free exciton offers great potential for inexpensive optoelectronic devices in the blue and near UV spectral region. Despite numerous research activities over the last years, reproducible and long-time-stable p-type ZnO is still difficult to achieve. Nitrogen at an oxygen-site and arsenic are potential candidates for the realisation of acceptor levels in ZnO and thereby p-type-conductivity. In scanning-capacitance-microscope measurements the long-time-stable p-type behaviour of MOCVD-grown nitrogen and arsenic dual doped ZnO-epilayers was shown [1]. Here we show further investigations of As-mono-doped and N / As-dual-doped MOCVD-grown ZnO-layers. The structural, electrical and optical properties of the epilayers grown under different AsH₃- and UDMHy-flows will be compared. [1]: A. Krtschil, A. Dadgar, N. Oleynik, J. Bläsing, A. Diez, and A. Krost, Local p−type conductivity in zinc oxide co−doped with nitrogen and arsenic, APL, to be published