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HL: Halbleiterphysik

HL 3: III-V semiconductors I

HL 3.2: Vortrag

Montag, 27. März 2006, 10:30–10:45, POT 51

Spin polarization in a two dimensional electron gas with spin-orbit interaction — •Mathias Duckheim and Daniel Loss — Department of Physics and Astronomy, University of Basel, Switzerland

Spin-orbit interaction in semiconductor structures can be visualized as an effective magnetic field with direction and magnitude depending on the electron momentum. It thus offers indirect control of the spin via the orbital degree of freedom and can be utilized to achieve coherent spin manipulation by tuning electric gates. In this context, we calculate the polarization of electrons in a disordered, two-dimensional semiconductor structure with spin-orbit interaction in a corresponding field configuration and find an analytical result for a finite measureable magnetization.