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Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 3: III-V semiconductors I

HL 3.7: Talk

Monday, March 27, 2006, 11:45–12:00, POT 51

Atomically resolved imaging of the GaAsN(110) surface — •V. Vossebürger1, D. Martin1, L. Ivanova1, A. Lenz1, R. Timm1, H. Eisele1, M. Dähne1, O. Schuhmann2, L. Geelhaar2, and H. Riechert21Technische Universität Berlin, Institut fürFestkörperphysik, Hardenbergstr. 36, D-10623 Berlin — 2Infinion Technologies, Corporate Research Photonics,D-81730 München

GaAs1−xNx is a highly interesting material because of its giant composition dependent optical bowing, which is theoretically described by the band anticrossing model (BAC)[1].
In order to determine the arrangement of nitrogen atoms in GaAsN alloys with low nitrogen concentration x between 1% and 2% as well as its electronic structure, cross-sectional scanning tunneling microscopy (XSTM) and spectroscopy (XSTS) experiments were performed of GaAsN layers in GaAs grown by molecular beam epitaxy (MBE).
Using high resolution voltage dependent XSTM images and simultaneously acquired XSTS images, we derive a structure model of the GaAsN(110) surface. In differential conductance spectra, displaying the local density of states, we observe a reduced band gap and an additional nitrogen-induced state. This state is related to the theoretically found band splitting in the BAC model.
This work was supported by the SFB 296, and project Da 408/8 of the DPG.

[1] W. Shan et al., Phys. Rev. Lett. 82, 1221 (1999)

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