Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 31: Organic semiconductors
HL 31.15: Vortrag
Mittwoch, 29. März 2006, 18:15–18:30, POT 51
Paracrystalline structure of P3HT thin films: X-ray studies — •Rosina A. Staneva1,2, Thomas Haber1, Attila J. Mozer3, Niyazi S. Sariciftci3, and Roland Resel1 — 1Institute of Solid State Physics, Graz University of Technology, Petersgasse 16, A-8010 Graz, Austria — 2Institute of Physics, Technical University of Ilmenau, Unterpörlitzer Srt. 38, D-98693 Ilmenau, Germany — 3Linz Institute for Organic Solar Cells (LIOS), Physical Chemistry, Johanes Kepler University Linz, Altenbergerstr. 69, A-4040 Linz, Austria
The paracrystalline structure of poly(3-hexylthiophene) (P3HT) thin films was studied by integral breadth evaluation of X-ray diffraction patterns. The 30-40 µm thin films were cast on low reflectance Si substrate by doctor blade technique. The wide angle X-ray diffraction (WAXD) measurements were done on as-prepared films and after annealing at elevated temperatures. The crystallite size and the lattice distortions were obtained taking in account the first, the second and the third order of the (100) reflection. Two approaches were compared: the paracrystalline model of Hosemann and the method of Williamson and Hall for size and strain analysis. It was found that the method of Hoseman fits better to the most of the scattering curves. The crystallite size of as prepared films was found to be 7-9 nm. It increases to 9-12 nm for the annealed films. The lattice distortions were obtained to be 3-4%. The both parameters do not show any clear dependence on the molecular weight Mw in the range of 20000-58000.