Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 31: Organic semiconductors

HL 31.17: Vortrag

Mittwoch, 29. März 2006, 18:45–19:00, POT 51

High-mobility organic thin-film transistors with low operation voltage — •Günther Leising, Barbara Stadlober, Ursula Haas, Anja Haase, Valentin Satzinger, Josef Krische, Hannes Maresch, Martin Zirkl, Heinz Pichler, and Georg Jakopic — Institut für Nanostrukturierte Materialien und Photonik, Joanneum Research GmbH, Franz-Pichler Strasse 30, A-8160 Weiz

Highly integrated consumer products are the main drivers for downscaling electronic devices. We work on the miniaturization of organic thin film transistors (TFT) for its application in plastic electronics. We have produced a series of bottom-gate organic (pentacene) TFTs with channel lengths (L) in the range 0.3 - 2.4 µm by means of nanoimprinting techniques, to investigate the effects of the channel length on the device characteristics (short channel effects). Organic sub-µm TFTs showed similar characteristics as comparable long-channel devices (carrier mobilities in the range of 0.1 cm²/Vs). Drain current saturation is observed for devices with L as small as 0.3 µm. The morphology of the pentacene domains is determined by the channel size and is studied by AFM. In the sub-µm regime we observe only a few pentacene crystallites filling the channel region. To achieve TFTs with a driving voltage below 5 Volts, we utilized a double-layer dielectric technique using a combination of inorganic and organic dielectric thin layers. Due to low leakage currents and the excellent growth of the pentacene thin films on the organic dielectric we could achieve carrier mobilities of up to 1 cm²/Vs in our miniaturized organic TFTs.