Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 31: Organic semiconductors

HL 31.3: Vortrag

Mittwoch, 29. März 2006, 15:00–15:15, POT 51

Structural and electronic characterization of Diindenoperylene single crystals — •Ashutosh Kumar Tripathi and Jens Pflaum — 3. Physikalisches Institut, University of Stuttgart, Germany

For the first time, we report on the structural and electronic characterization of DIP crystals grown by sublimation technique. X-ray diffraction measurements on uncapped as well as on Ag capped DIP crystals prove the existence of two different volume phases below and above 400 K, the high-T phase corresponding to the DIP thin film structure observed on e.g. oxide surfaces [1]. By temperature dependent studies the effect of the phase transition on the electronic transport properties indicates the strong correlation between the structural order and the charge carrier mobilities. Remarkably, both electron and hole transients were recorded along c’-direction and over the studied temperature range the electron mobility was found to be higher than that for holes by an order of magnitude. As most of the organic materials are very sensitive for oxidation in combination with trap formation, observation of electron mobility indicates this material to be a potential candidate for organic electronics. Further experiments leading to FETs based on DIP single crystals are in progress.

[1] A. C. Duerr et al., Phys. Rev. B 68, 115428 (2003)