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HL: Halbleiterphysik

HL 32: Photovoltaic

HL 32.11: Vortrag

Mittwoch, 29. März 2006, 17:15–17:30, BEY 118

Monitoring the sulfurization of (Ga,S)-Cu-In photovoltaic precursor layers by energy dispersive X-ray diffraction — •Alfons Weber, Immo Koetschau, and Hans-Werner Schock — Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany

Phase transformations of Cu_xIn-(Ga,S) thin film stacks were investigated in annealing experiments under sulfur vapor using in-situ energy dispersive X-ray diffraction (EDXRD). So far the formation of CuInS₂ absorbers for photovoltaic applications has been studied in similar annealing experiments using metallic Cu_xIn precursor layers[1]. In the present study a (Ga,S) layer was deposited in addition to the elemental Cu and In precursor layers to study the phase formation of Cu(In,Ga)S₂ alloys. The addition of Ga is expected to enhance the Voc of CuInS₂-based solar cells. The sulfurization was carried out in a specially designed chamber installed at the synchrotron beamline F3 at Hasylab in Hamburg. Using the synchrotron source it is possible to get spectra with high resolution at short integration times and to trace fast structural changes during the sulfurization process. The study shows that the annealing process does not lead to a homogeneous Cu(In,Ga)S₂ alloy, but to a separation of a Ga-rich and an In-rich phase. We will discuss the effect of (Ga,S) on the electronic properties of complete devices made of these films.

[1] Djordjevic J., Rudigier E., Scheer R, Materials Research Society symposium proceedings 763, (2003) p. 383-389