Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 32: Photovoltaic

HL 32.8: Vortrag

Mittwoch, 29. März 2006, 16:15–16:30, BEY 118

1. Doping induced structural changes in CuInS2 thin films and the effects on the optical and electrical properties — •Tobias Enzenhofer, Thomas Unold, and Hans-Werner Schock — Hahn-Meitner-Institut, Glienicker Strasse 100, 14109 Berlin

In this contribution we connect structural and optical changes induced by doping with group-II elements in CuInS2 thin films. The admixture of small amounts of zinc and/or magnesium (<1 at. %) results in significant changes of the absorber and solar cell properties of the chalcopyrite system Cu-In-S2. With Zn/Mg doping, solar cells show an enhancement of the open circuit voltage from 700mV to more than 800mV. The systematical study of the effect of incorporation of dopants into the absorber layers by annealing with Raman and photoluminescence spectroscopy reveal an increase in the Raman response of the cation-anion vibration modes accompanied with the generation of a new broad emission band at 1.35eV in the photoluminescence spectra. From photoluminescence measurements we find a change of the nature of bulk and surface defects for Zn/Mg doped samples. Moreover the electronic transport in doped and undoped absorber layers is compared by in-situ conductivity measurements during the annealing process.