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14:30 |
HL 33.1 |
Analysis of AlN/Diamond Heterojunctions by Photoelectron Spectroscopy — •Olaf Weidemann, Bernhard Laumer, Thomas Wassner, Martin Stutzmann, and Martin Eickhoff
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14:45 |
HL 33.2 |
Critical points of the band structure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy — •C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, and A. Hangleiter
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15:00 |
HL 33.3 |
GaN-based devices on Si(001) grown by MOVPE — •F. Schulze, J. Bläsing, A. Dadgar, T. Hempel, A. Diez, A. Krtschil, J. Christen, and A. Krost
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15:15 |
HL 33.4 |
Nanostructering of GaN-based semiconductors with focused ion beam — •Timo Aschenbrenner, Jens Dennemarck, Stephan Figge, and Detlef Hommel
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15:30 |
HL 33.5 |
MOVPE of Cr-doped GaN — •Yong Suk Cho, Nicoleta Kaluza, Uwe Breuer, Vitaliy Guzenko, Hilde Hardtdegen, and Hans Lüth
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15:45 |
HL 33.6 |
MBE Growth of cubic InN — •Jörg Schörmann, Stefan Potthast, Mark Schnietz, Christian Napierala, Rüdiger Goldhahn, Donat Josef As, and Klaus Lischka
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16:00 |
HL 33.7 |
Nitrogen-15 and Gallium-71 nuclear magnetic relaxation measurements in GaN — •Anthony Kent, Robin Morris, Helen Geen, C Thomas Foxon, and Sergei Novikov
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16:15 |
HL 33.8 |
Electrical properties of cubic AlxGa1−xN/GaN heterostructures — •Stefan Potthast, Jörg Schörmann, Donat Josef As, Klaus Lischka, Hiroyuki Nagasawa, and Masayuki Abe
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16:30 |
HL 33.9 |
Detailed analysis of the dielectric function for wurtzite In- and N-face InN — •P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, M. Rakel, C. Cobet, N. Esser, H. Lu, W.J. Schaff, M. Kurouchi, and Y. Nanishi
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16:45 |
HL 33.10 |
Structural studies of GaN:Mn films — •Tore Niermann, Martin Kocan, Martin Röver, Jörg Malindretos, Michael Seibt, and Angela Rizzi
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17:00 |
HL 33.11 |
Optical investigations of the lateral homogeneity of InGaN MQW heterostructures on 2 inch wafers — •Christoph Hums, Armin Dadgar, Jürgen Bläsing, and Alois Krost
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