Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 33: GaN: Preparation and characterization

HL 33.1: Vortrag

Mittwoch, 29. März 2006, 14:30–14:45, BEY 154

Analysis of AlN/Diamond Heterojunctions by Photoelectron Spectroscopy — •Olaf Weidemann, Bernhard Laumer, Thomas Wassner, Martin Stutzmann, and Martin Eickhoff — Walter Schottky Institut, Technische Universität München, 85748 Garching

N-type doping of diamond still is a major problem which hinders the realization of bipolar devices like p-n-diodes. In contrast, Si-doping of AlN has been shown to result in technologically relevant n-type conductivity. The combination of both materials in a light emitting AlN/diamond hetero diode has recently been demonstrated. For a detailed understanding of carrier transport and light emission at the AlN/diamond interface, knowledge of the respective band alignment and interface structure is necessary. We have analyzed the AlN/diamond interface by X-ray and UV-photoelectron spectroscopy carried out during the sequential growth on H-terminated and O-terminated single crystalline diamond substrates. The influence of the nucleation process on the electron affinity of the diamond substrate has been analyzed and the growth mode of the AlN-film as well as the conduction band profile at the heterojunction has been determined. Complementary analysis by atomic force microscopy and electronic transport measurements has been carried out.