Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 33: GaN: Preparation and characterization

HL 33.10: Vortrag

Mittwoch, 29. März 2006, 16:45–17:00, BEY 154

Structural studies of GaN:Mn films — •Tore Niermann, Martin Kocan, Martin Röver, Jörg Malindretos, Michael Seibt, and Angela Rizzi — IV. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

We studied the effect of Mn incorporation on the microstructure of GaN films by high resolution electron microscopy and energy dispersive X-ray analysis. The GaN films were grown by molecular beam epitaxy under various conditions. It is found, that Mn can be dissolved up to nearly 5% metal content. In these films the Mn incorporation results in a columnar growth of the GaN, i.e. in a degradation of the film quality. Further properties of the incorporated Mn were studied. Higher Mn amounts result in the formation of precipitates which are identified as GaMn₃N by chemical analysis and diffraction techniques. The Mn concentration in the remaining GaN matrix is below the detection limit of EDX, i.e. about 0.5 at%.