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HL: Halbleiterphysik

HL 33: GaN: Preparation and characterization

HL 33.3: Vortrag

Mittwoch, 29. März 2006, 15:00–15:15, BEY 154

GaN-based devices on Si(001) grown by MOVPE — •F. Schulze, J. Bläsing, A. Dadgar, T. Hempel, A. Diez, A. Krtschil, J. Christen, and A. Krost — Institut für Experimentelle Physik, Otto-v.-Guericke-Universität Magdeburg, PF 4120, 39104 Magdeburg

The Si(001) substrate orientation offers an obvious approach for the integration of GaN-based devices with the standard silicon technology, because this orientation is used in silicon mainstream technology. However, the main challenges are the different lattice symmetries and crystallographic orientations of GaN and Si(001). We will present structural and optical investigations on GaN layers on Si(001) grown by metalorganic vapour phase epitaxy (MOVPE). In our approach a high temperature AlN-seed layer and 4^∘ off-oriented substrates allow to grow c-axis oriented GaN on Si(001) with one well defined in-plane alignment. Thus, a smooth and fully closed single-crystalline GaN layer on Si(001) is obtained. The crystallographic structure is investigated by X-ray diffraction measurements. The achieved FWHM of the GaN(0002) rocking curve is 0.26^∘ and the in-plane twist is 0.82^∘, determined by a GaN(10-10) ω-scan. The surface morphology was analyzed by FE-REM imaging and AFM, and the optical properties by photo- and cathodoluminescence. By growing an approx. 2.3 µm crack-free buffer layer GaN-based LEDs and FET devices on Si(001) were made and will be presented.