Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 33: GaN: Preparation and characterization
HL 33.5: Talk
Wednesday, March 29, 2006, 15:30–15:45, BEY 154
MOVPE of Cr-doped GaN — •Yong Suk Cho1, Nicoleta Kaluza1, Uwe Breuer2, Vitaliy Guzenko1, Hilde Hardtdegen1, and Hans Lüth1 — 1Institute of Thin Films and Interfaces (ISG-1), Center of Nanoelectronic Systems for Information Technology, Research Center Jülich, 52425 Jülich, Germany — 2Central Department of Analytical Chemistry (ZCH), Surface Analysis, Research Center Jülich, 52425 Jülich, Germany
Recently, first studies on MBE grown Cr-doped GaN revealed ferromagnetism for dilute magnetic semiconductors. Here we report for the first time on the incorporation of Cr in GaN with metalorganic vapor phase epitaxy using different hardware setups and different flow conditions. Conventional Ga and N precursors were used and bis(cylcopentadienyl)chromium (Cp2Cr) was employed as the Cr precursor. Undoped GaN epilayer were grown to serve as a template for Cr-doped GaN. The mole fraction of Cp2Cr used for Cr-doped GaN was varied in gas phase from 5.67×10−9 mol/min to 1.02×10−7 mol/min, while the growth temperature and V/III ratio were kept constant. Secondary ion mass spectrometry provided that the different hardware setups as well as the flow conditions strongly affect the concentration of Cr in the layer by 18%. Also a linear dependence between mole fraction of Cp2Cr in gas phase and incorporated Cr in solid phase was found. X-ray diffraction, photoluminescence and Raman spectroscopy studies were performed as well as superconducting quantum interference device measurements carried out to study the structural and magnetic properties of the layers. The results will be presented.