Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 33: GaN: Preparation and characterization
HL 33.6: Talk
Wednesday, March 29, 2006, 15:45–16:00, BEY 154
MBE Growth of cubic InN — •Jörg Schörmann1, Stefan Potthast1, Mark Schnietz1, Christian Napierala2, Rüdiger Goldhahn2, Donat Josef As1, and Klaus Lischka1 — 1University of Paderborn, Department of Physics, Warburger Strasse 100, D-33095 Paderborn, Germany — 2Institute of Physics, TU Ilmenau, PF 100565, D-98684 Ilmenau, Germany
Among III-nitride semiconductors, InN has the highest electron drift velocity, the smallest effective mass and the smallest direct band gap. Therefore it is expected to be one promising material for high frequency electronic devices such as field effect transistors (FET). Another application for InN are InN/GaN quantum well structures for intersubband transitions. Due to the large conduction band offset (about 1.4eV 60:40) this material system allows intersubband transitions in the range of 1-10µm. 140nm thick cubic InN films were grown on top of a c-GaN buffer layer (800nm) by rf-plasma assisted MBE at different growth temperatures. X-Ray diffraction investigations show that the c-InN layers consist of a predominant zinc blende structure with a fraction of the wurtzite phase on the (111) facets of the cubic layer. The full-width at half-maximum of the c-InN (002) reflex is less than 50arcmin. Reflection measurements show an absorption edge at ∼1.5eV. The bandgap of our c-InN layers was obtained by photoluminescence and ellipsometry.