Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 33: GaN: Preparation and characterization
HL 33.9: Vortrag
Mittwoch, 29. März 2006, 16:30–16:45, BEY 154
Detailed analysis of the dielectric function for wurtzite In- and N-face InN — •P. Schley1, R. Goldhahn1, A.T. Winzer1, G. Gobsch1, M. Rakel2, C. Cobet2, N. Esser2, H. Lu3, W.J. Schaff3, M. Kurouchi4, and Y. Nanishi4 — 1Institut f. Physik, TU Ilmenau — 2ISAS Berlin — 3Cornell University Ithaca — 4Ritsumeikan University
A detailed analysis of the dielectric function (DF) for wurtzite In- and N-face InN is presented for the first time. The experimental data cover the energy range from 0.74 up to 9.5 eV (data above 4 eV refer to the use of synchrotron radiation at the Berlin storage ring BESSY II) and were obtained by ellipsometric studies from temperatures of 440 K down to 160 K. Before the measurements, the surface quality was improved by annealing the samples for 10 minutes at 400 ∘C. By fitting the third derivatives of the DF’s a high resolution determination of the transition energies of the high energy critical points of the band structure is achieved. All critical points shift to higher energies if the temperature is decreased. At T=160 K up to seven transitions are analyzed. For both polarities the obtained transition energies show an excellent agreement within 20 meV. The experimental results are compared with recent theoretical calculations.