Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 36: Optical properties

HL 36.10: Talk

Wednesday, March 29, 2006, 18:30–18:45, POT 151

Interband Thermoluminescence of Semiconductors and Semiconductor Nanocrystals in the Near-Infrared — •Stefan Hanna and Alois Seilmeier — Physikalisches Institut, Universität Bayreuth, D-95440 Bayreuth, Germany

Generally semiconductor luminescence is measured following electronic or optical sample excitation. In this contribution experiments are presented in which the luminescence of undoped semiconductors and of semiconductor nanocrystals near the band gap is solely thermally excited and explored by a simple and unconventional technique. Luminescence spectra are obtained at ambient conditions after slightly heating the samples to approximately 100^∘C without using any additional electronic or optical means of excitation. In our investigations, bulk GaAs, bulk InP and semiconductor doped glasses are studied. We show that absorption properties and band gap positions obtained directly from emission spectra not only correspond well to those obtained from transmission measurements, but also yield additional information about the role of defects giving rise to emission from within the band gap. This technique may be of considerable interest for online monitoring of material growth, which is generally performed at elevated temperatures, without any interference with the growth process.