Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 36: Optical properties
HL 36.2: Talk
Wednesday, March 29, 2006, 16:30–16:45, POT 151
Type I type II transition in optical spectra - experiments and microscopic theory — •Christoph Schlichenmaier1, Angela Thränhardt1, Torsten Meier1, Jörg Hader2, Jerome V. Moloney2, Stephan W. Koch1, Kristian Hantke1, Wolfgang Rühle1, Heiko Grüning1, Peter J. Klar1, and Wolfgang Heimbrodt1 — 1Fachbereich Physik, Philipps-Universität Marburg, Renthof 5, 35032 Marburg — 2Arizona Center for Mathematical Sciences, The University of Arizona, Tucson, AZ 85721, USA
The band alignment of GaNAs in heterostructures is determined by investigating the energetically lowest optical band-to-band transition of In0.23Ga0.77As/GaNyAs1−y samples with varying y. In a type II alignment this transition is between states located in different layers. Photoreflectance, photoluminescence, and the radiative decay of excited carrier densities are both measured and microscopically modeled. The bandstructure for every sample is computed. Based on this bandstructure all optical properties and the radiative decay are computed using the semiconductor Bloch [1] and luminescence [2] equations including electron-electron and electron-phonon interaction on scattering level. Thus the modeling is consistent and without free parameters. Overall good agreement between theory and experiment is achieved and used to explain all experimental features and to determine the band alignment [3,4].
[1] J. Hader et al., Sol. State El. 47, 513 (2003)
[2] M. Kira et al., Prog. Quantum Electron., 23, 189 (1999)
[3] C. Schlichenmaier et al., Appl. Phys. Lett., 86, 081903, (2005)
[4] K. Hantke et al., Phys. Rev. B, 71, 165320 (2005)