Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 36: Optical properties
HL 36.5: Talk
Wednesday, March 29, 2006, 17:15–17:30, POT 151
Extracting the Random Potential of Disordered Semiconductors via Directional Interference of Photoluminescence — •Peter Bozsoki1, Walter Hoyer1, Mackillo Kira1, Klaus Maschke2, Torsten Meier1, Peter Thomas1, and Stephan W. Koch1 — 1Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Germany — 2Institut de Théorie des Phénomènes Physiques, Ecole Polytechnique Fédérale, CH-1015 Lausanne, Switzerland
We suggest a new method to gain information about the influence of disorder on the emitting electronic states in semiconductors. It uses the interference contrast of the spontaneously emitted light into different directions [1]. A microscopic expression is presented for the interference contrast in a model which includes both random disorder and Coulomb interaction. This relation gives a direct access to detailed information about the effect of disorder on the electronic states.
[1] W. Hoyer et.al. PRL 93, 067401 (2004)