Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 36: Optical properties

HL 36.7: Talk

Wednesday, March 29, 2006, 17:45–18:00, POT 151

Optical activation and electrical stabilization of the ultra violet electroluminescence from SiO2:Gd gate oxide layers by fluorine and potassium co-implantations — •Slawomir Prucnal, J.M. Sun, H. Reuther, and W. Skorupa — Institute of Ion Beam Physics and Materials Research,Forschungszentrum Rossendorf,POB 510119, D-01314 Dresden, Germany.

If amorphous SiO2 is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid interaction and annealing processes (oxygen deficiency centres ODC, non-bridging oxygen hole centres NBOHC, E*-centres, etc.) leading to charge trapping effects during electrical excitation. Metal-Oxide-Silicon-based light emitting diodes (MOSLEDs) with Gd implanted SiO2 layers exhibit strong ultra violet electroluminescence (EL) at 316 nm from Gd3+ ions and an enhancement of the luminescence from the aforementioned defects. Elimination or neutralisation of such defects is very important from the viewpoint of electrical stability of MOSLEDs. It will be demonstrated that (i) an additional fluorine implant into a SiO2:Gd layer leads to decrease of E*-centres and ODCs improving the efficiency of the MOSLED; and (ii), an additional potassium implant produces positive ions leading to a compensation effect for the negatively charged electron traps and, hence, to an reduced quenching of the EL efficiency and increased MOSLED lifetime .