Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 36: Optical properties
HL 36.9: Vortrag
Mittwoch, 29. März 2006, 18:15–18:30, POT 151
Optical properties and energy transfer studies of AlN doped with rare earths at high concentrations — •Gregor Öhl1, Ulrich Vetter1,2, and Hans Hofsäss1 — 1Georg-August-Universität, II. Physikalisches Institut, Göttingen — 2Philipps-Universität, AG Oberflächenphysik, Marburg
Rare earths (RE) in AlN, e.g. AlN:Gd [1,2] or AlN:Eu [3], have increasingly been attracting interest during recent years due to their promising features, e.g. as electroluminescent light emitters.
For increasing RE concentrations, one expects energy transfer reactions between different RE ions, leading to possible changes in luminescence intensity and lifetime.
In our studies, we investigated the systems (Pm,Sm):AlN, Gd:AlN and Eu:AlN. The REs were implanted at a fluence of about 1013 cm−2 in the first case, in the latter cases at different energies giving a square implantation profile, with RE concentrations of the order of atomic percent. Monitoring the effect of the post-implantation annealing procedure (up to about 1600 K), the critical implantation fluence for lattice recovery was determined to be in the order of some 1016 cm−2.
Optical properties were investigated by temperature dependent time-resolved cathodoluminescence studies, energy transfer studies were performed on selected intra−4f transitions of the implanted lanthanide ions showing concentration-related effects.
[1] U. Vetter et al., Appl. Phys. Lett. 83, 11 (2003)
[2] J.B. Gruber, U. Vetter et al., Phys. Rev. B 69 (2004)
[3] W.M. Jadwisienczak, H.L. Lozykowski et al., JAP 89 (2001)