Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 42: Quantum dots and wires: Preparation and characterization I
HL 42.4: Vortrag
Donnerstag, 30. März 2006, 11:45–12:00, POT 51
Field effect transistors with silicon nanowires as active region — •W. M. Weber1,2, E. Unger1, A. Graham1, M. Liebau1, G. Duesberg1, C. Cheze1, L. Geelhaar1, H. Riechert1, P. Lugli2, and F. Kreupl1 — 1Infineon Technologies AG. 81370 Munich, Germany — 2Technische Universität München, Institute for Nanoelectronics. 80333 Munich, Germany
The steadily increasing requirements for future electronic semiconductor applications demand large efforts in the miniaturization and performance increase of new transistors. Catalytically grown silicon nanowires (Si-NW) are promising elements for such devices combining bottom-up processing and excellent electrical characteristics. Here, we present experimental results on field effect transistors using thin Si-NWs (diameter below 25 nanometers) as the active regions. Nanowires were grown by chemical vapour deposition using Au as catalyst. Subsequently, the Si-NWs were transferred to test chips for electrical characterization. Test chips consist of a patterned electrode structure on top of an oxide layer serving as gate dielectric. 3-terminal measurements are possible by using the entire substrate as a back-gate. For NiSi, CoSi, and PdSi source and drain contacts, the output characteristic implies Schottky barriers. Although the Si-NWs are nominally undoped, they show p-type behaviour for these contact metals. The transfer characteristic can be modulated by more than 7 orders of magnitude. The on current is as high as 1 micro-ampere for a single 1 micrometer long and 23 nanometers thick wire as the active region. Also, devices with short gate lengths down to 18 nanometers were investigated.