Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 42: Quantum dots and wires: Preparation and characterization I

HL 42.5: Talk

Thursday, March 30, 2006, 12:00–12:15, POT 51

Growth of ZnO Nanorods for Optoelectronic and Spintronic Applications — •A. Che Mofor, Andrey Bakin, Abdel-Hamid El-Shaer, Eva Schlenker, and Andreas Waag — Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, D-38106 Braunschweig

ZnO has a wide band gap of 3.37 eV at room temperature, it is transparent, radiation resistant with lasing achievable at temperatures well above 300 K. If successfully doped with magnetic impurities, ZnO and its nanostructures would be an interesting candidate for spintronic applications. Growth of ZnO nanorods using metal catalysts and graphite at relatively high temperatures (usually above 1000^∘ C) has been reported. These methods are associated with impurities that may not be detected by conventional crystal characterisation methods like transmission electron microscopy and x-ray diffractometry. We report on the growth of ZnO nanorods by employing a specially designed horizontal vapour transport system with elemental sources at relatively low temperatures without catalysis. We employed 6N elemental Zn carried by N2 gas and 99.995% O2 gas as reactants. The ZnO nanorods were grown directly on 6H-, 4H-SiC and (11-20)Al2O3 substrates at growth temperatures from 650 to 800^∘ C and pressure 10-25 mbar. X-ray diffraction rocking curves with a full width at half maximum (FWHM) of 0.23^∘ and room temperature photoluminescence peaks of high intensity and FWHM of 90 meV were obtained. ZnO nanorods with widths of 80-900 nm and lengths of 4-12 µm and density of 109 cm-2 were noted. Different approaches for nanodevice realisation shall also be presented.