Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 43: GaN: Devices I

HL 43.4: Talk

Thursday, March 30, 2006, 11:45–12:00, BEY 118

Dependence of exciton energy on dot size in GaN/AlN quantum dots — •David Williams¹, Aleksey Andreev², and Eoin O Reilly¹ — ¹Tyndall National Institute, Lee Maltings, Cork, Ireland — ²Advanced Technology Institute, University of Surrey, Guildford GU2 7XH, UK

We show analytically that the exciton energy in nitride quantum dots (QDs) decreases linearly with increasing dot height, provided that the height to radius ratio remains constant. This behaviour is due to the strong polarization fields present in nitride dots, with the constant of proportionality given by the slope of the polarization potential. We also present a useful analytical approximation for the electron and hole wavefunctions in nitride QDs in terms of Airy functions, which provides reliable estimates for the actual energies and wavefunctions.