Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 43: GaN: Devices I

HL 43.5: Talk

Thursday, March 30, 2006, 12:00–12:15, BEY 118

Physical Model to explain and predict performance of AlGaN/GaN-based MIS-HFETs — •Gero Heidelberger¹, Michel Marso¹, Alfred Fox¹, Juraj Bernát¹, Hans Lüth¹, and Peter Kordoš² — ¹Institute of Thin Films and Interfaces and cni - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich, D-52425 Jülich, Germany — ²Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia

AlGaN/GaN-based Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors (MIS-HFET) have been shown to be a promising candidate for high power and high frequency applications. Nevertheless, the underlying interface physics is not entirely understood yet. In particular, the conditions underneath the gate are unknown if it is separated by material such as SiO₂, HfO₂ or DyScO₃. In this work we present a model of the electrical behaviour of a MIS-HFET taking into account the problems arising from the metal-insulator-semiconductor structure. By means of this model we can predict essential DC and RF power measures knowing the geometrical and material data of the device. Furthermore, the model is suitable to explain results we gained from a comparative study of unpassivated, passivated HFETs and MIS-HFETs where we were able to demonstrate the superiority of the MIS-HFET concept with regards to DC and RF power performance.