Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 47: GaN: Devices II
HL 47.2: Vortrag
Donnerstag, 30. März 2006, 15:30–15:45, BEY 118
Crack-free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities — •H. Lohmeyer1, K. Sebald1, C. Kruse1, R. Kröger1, J. Gutowski1, D. Hommel1, J. Wiersig2, and F. Jahnke2 — 1Institute of Solid State Physics, University of Bremen, P.O.Box 330 440, 28359 Bremen, Germany — 2Institute of Theoretical Physics, University of Bremen, P.O.Box 330 440, 28359 Bremen, Germany
The successful realization and optical characterization of fully epitaxially grown monolithic nitride vertical-cavity surface-emitting laser (VCSEL) structures and pillar microcavities (MCs) is presented. VCSEL structures made of InGaN/GaN λ-cavities and Bragg mirrors composed of GaN and AlN/(In)GaN superlattices have been fabricated by molecular-beam epitaxy. Airpost pillar MCs with diameters between 800 nm and 3 µm were realized by focused ion-beam etching.
The reflectivity data as well as the spontaneous emission spectra of the planar VCSEL structures show a pronounced influence of the optical-mode confinement by the cavity. The discrete mode spectrum of the pillars is studied by micro-photoluminescence measurements. The measured data for different pillar diameters show good agreement with calculations of the transmission spectra of the three-dimensional pillars based on a vectorial transfer-matrix method.
The work has been supported by the Deutsche Forschungsgemeinschaft within the framework of the research group Physics of nitride based, nanostructured, light-emitting devices, grant No. FOR 506.