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HL: Halbleiterphysik

HL 47: GaN: Devices II

HL 47.4: Vortrag

Donnerstag, 30. März 2006, 16:00–16:15, BEY 118

Inhomogeneous broadened gain spectra of InGaN/GaN laser diodes — •Ulrich Schwarz¹, Georg Feicht¹, Bernd Witzigmann², Valerio Laino², Mathieu Luisier², Alfred Lell³, and Volker Härle³ — ¹Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg — ²OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg — ³Integrated Systems Laboratory, ETH Zürich, CH-8092 Zürich

For InGaN quantum wells (QW) indium and QW width fluctiations are a critical issue, as they cause carrier localization and affect the performance of InGaN LEDs and laser diodes (LD). We compare experimental gain spectra measured by the Hakki-Paoli mehotd with a microscopic theory including quantum-confined stark effect (QCSE) and many-body effects to analyse the contribution of homogeneous and inhomogeneous broadening to the QW gain. In particular we perform low-temperature gain spectroscopy of InGaN LDs which confirms the notion that inhomogeous broadening due to structual variations is a significant contribution to QW gain in InGaN LDs. From these measurements we can also give an estimate of the nonradiative recombination rate.