HL 47: GaN: Devices II
Thursday, March 30, 2006, 15:15–16:30, BEY 118
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15:15 |
HL 47.1 |
MOVPE growth of nitride-based green LEDs — •D. Fuhrmann, T. Litte, C. Netzel, H. Bremers, U. Rossow, and A. Hangleiter
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15:30 |
HL 47.2 |
Crack-free monolithic nitride vertical-cavity surface-emitting laser structures and pillar microcavities — •H. Lohmeyer, K. Sebald, C. Kruse, R. Kröger, J. Gutowski, D. Hommel, J. Wiersig, and F. Jahnke
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15:45 |
HL 47.3 |
Study and comparison of efficiency and optical degradation of GaN/InGaN Light Emitting Diodes grown on SiC substrates — •Gianluca Tamiazzo, Ulrich Zehnder, Thomas Zahner, and Uwe Strauss
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16:00 |
HL 47.4 |
Inhomogeneous broadened gain spectra of InGaN/GaN laser diodes — •Ulrich Schwarz, Georg Feicht, Bernd Witzigmann, Valerio Laino, Mathieu Luisier, Alfred Lell, and Volker Härle
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16:15 |
HL 47.5 |
Processing and Characterization of GaN homo-epitaxial Laser Diodes — •Jens Dennemarck, Stephan Figge, and Detlef Hommel
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