Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 49: Devices

HL 49.3: Talk

Thursday, March 30, 2006, 15:45–16:00, BEY 154

Hydrogenated Microcrystalline Silicon Thin Film Transistors — •Kah-Yoong Chan^1,2, Eerke Bunte ¹, Helmut Stiebig¹, and Dietmar Knipp ² — ¹Research Center Jülich, Institute of Photovoltaic, 52425 Jülich, Germany — ²International University Bremen, School of Engineering and Science, 28759 Bremen, Germany

Hydrogenated microcrystalline silicon (µc-Si:H) has recently been proven to be a promising material for thin film transistors TFTs. Electron carrier mobility of >100cm2/Vs, deconvoluted from µc-Si:H TFT characteristics has been demonstrated [1]. The high carrier mobility and good stability of the transistors is caused by the presence of crystalline silicon domains with a typical crystal diameter of 5-20nm. In our study, we developed top-gate staggered µc-Si:H TFTs on glass substrate using plasma enhanced chemical vapor deposition (PECVD). Device structures were fabricated by photolithography ranging from 10µm to 100µm channel length and 100µm to 1000µm channel width. The electrons were injected in the channel via 30nm thick n-type µc-Si:H layer. The thin n-type film prepared at ~280^∘C exhibits room temperature dark conductivity of ~10S/cm and an activation energy of ~17meV. The channel of the transistor was formed by intrinsic µc-Si:H prepared at ~200^∘C in the regime near the transition to the amorphous growth (crystalline volume fraction > 50%). The dielectric was realized by PECVD deposited SiO2 film at ~150^∘C. The fabrication process together with first experimental results from the electrical characterizations of the µc-Si:H TFTs will be presented. 1. C-H. Lee, A. Sazonov, A. Nathan, Mater. Res. Soc. Symp. Proc. Vol. 862 (2005) A17.5.1-6.