HL 49: Devices
Donnerstag, 30. März 2006, 15:15–16:30, BEY 154
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15:15 |
HL 49.1 |
80 GHz Passive Mode Locking of InGaAs Quantum Dot Lasers Emitting at 1.3 µm — •Gerrit Fiol, M. Kuntz, F. Hopfer, M. Lämmlin, C. Szewc, D. Bimberg, A.R. Kovsh, and N.N. Ledentsov
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15:30 |
HL 49.2 |
Comparison of carbon nanotube field-effect-transistor architectures: Schottky-barrier, conventional and tunneling CNFETs — •Joachim Knoch, Joerg Appenzeller, Yu-Ming Lin, Zhihong Chen, and Phaedon Avouris
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15:45 |
HL 49.3 |
Hydrogenated Microcrystalline Silicon Thin Film Transistors — •Kah-Yoong Chan, Eerke Bunte , Helmut Stiebig, and Dietmar Knipp
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16:00 |
HL 49.4 |
Impact of the body thickness on the performance of silicon-on-insulator Schottky-barrier metal-oxide-semiconductor field-effect-transistors — •Joachim Knoch, Min Zhang, Siegfried Mantl, and Joerg Appenzeller
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16:15 |
HL 49.5 |
Dynamic and static properties of quantum-dot based semiconductor optical amplifiers at 1.3 µm — •Matthias Lämmlin, G. Fiol, M. Kuntz, F. Hopfer, N.N. Ledentsov, A.R. Kovsh, A. Jacob, A. Umbach, and D. Bimberg
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